• Wafer

  • Epitaxial wafers ranging from Wireless RF, tele-communication, data storage to power electronics applications

    Brand: IQE

    We provide III-V compound epitaxial wafer applied for wireless RF, power electronics, power amplifier, tele-communication & data communication, optical fiber communication, optical storage and gesture recognition, etc.
    The epitaxy could be carried on multiple type of substrates including GaAs, InP, GaSb, GaN, SiC and Si.
    The wide range products we offer are HBT, HEMT, pHEMT, mHEMT, FP laser, DFB laser, VCSEL, detectors, PIN dioes, APD, multi-junction CPV, QWIP, etc.
    Diameter ( inch ) : 2, 3, 4, 6, 8

  • Si Prime wafer, Test wafer, Dummy wafer with growth method of CZ, MCZ and FZ.

    Brand: Multiple Japan and Taiwan makers available, please contact us for more detail

    Ingot Pulling Method: Czochralski (Cz) method, Czochralski with longitudinal Magnetic field (MCZ), Floating Zone (FZ) method ;
    Grades:  Prime Grade, Test Grade, Dummy & Mechanical Grade
    Sizes (Diameter, inch) : 2, 3 , 4, 5, 6, 8, 12
    Dopaning Types :
    P-type: Boron
    N-type: Phorsphorus, Antimony, Arsenic

  • Silicon reclaimed wafer
    Si Realaim Service: Reclaim, Chemical etching, Polishing, Wafer Cleaning, Film Removal,
    Pattern Removal

    Brand: Multiple Japan and Taiwan makers available, please contact us for more detail

    We provide Silicon reclaim wafer service & reclaim wafers

  • Silicon wafer with SiO2 film ;
    coating , cutting, dicing services
    Service : Oxide layer on Silicon wafer,
    Silicon coating , cutting, dicing services

    Brand: Multiple Japan and Taiwan makers available, please contact us for more detail

    We provide Silicon wafer with SiO2 film deposited.
    Service of cutting coated Si wafer into customized size or shape is available.

  • GaAs , InP, Ge substrate with Crystal Growth Method of VGF

    We provide high-performance GaAs, InP and Ge Substrate for major electronic and opto-electronic applications,
    Ingot Growth Method: Vertical Gradient Freeze (VGF)

    GaAs substrate
    Diameter(inch): 2, 3, 4, 6
    Doping Types:
    Semi-Insulating: Undoped;
    Semi-Conducting, P-type ( Zinc, Zn ) and N-type ( Silicon, Si)

    InP Substrate
    Diameter(inch): 2, 3, 4;
    Doping Types: Semi-Insulating: Iron(Fe) doped ;
    Semi-Conducting: P-Type ( Zinc ) and N-type ( Sulfur, S or Tin, Sn);
    Undoped

    Ge Substrate
    Diameter(inch): 2, 4, 6;
    Doping Types:
    Semi-Conducting: P-Type ( Gallium, Ga) and N-type ( Arsnic, As);

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